Abstract
Metal-organic chemical vapor deposition (MOCVD) grown n-type Gallium nitride (GaN) has been irradiated with 100MeV Ni9+ ions at room temperature. Atomic force microscopy (AFM) images show the nano-clusters' formation upon irradiation and the irradiated GaN surface roughness increases with the increasing ion fluences. High-resolution X-ray diffraction (HR-XRD) analysis reveals the formation of Ga2O3 due to the interface mixing of GaN/Al2O3 upon irradiation. FWHM values of GaN (0002) increases due to the lattice disorder. Photoluminescence studies show reduced band edge emission and yellow luminescence (YL) intensity with the increasing ion fluences. Change in the band gap energy between 3.38 and 3.04eV was measured by UV-visible optical absorption spectrum on increasing the ion fluences.
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