Abstract
We theoretically explore the effect of a [Formula: see text]-potential on spin-polarized dwell time for electron in a magnetic nanostructure, which can be achieved by depositing a vertically-magnetized ferromagnetic stripe on top of InAs/AlxIn[Formula: see text]As. The dwell time is found to be still spin-polarized because the [Formula: see text]-potential does not eliminate the spin-field interaction in the magnetic nanostructure. Spin-polarized dwell time is also found to be controllable by changing weight or position of the [Formula: see text]-potential since the effective potential experienced by electron in the magnetic nanostructure depends on the [Formula: see text]-potential. Therefore, such a [Formula: see text]-doped, magnetic nanostructure can act as a structurally-manipulable temporal spin splitter for spintronic device applications.
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