Abstract
Electric-field controlled magnetism is a potential way to realize strong magneto-electric (ME) coupling for nonvolatile memory applications. The electric field induced nonvolatile modulated magnetization was obtained in NiFe2O4/SrRuO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) thin film heterostructures. The collective effect of charge and strain significantly modified the magnetization of the NiFe2O4 layer in NiFe2O4/SrRuO3/PMN-PT heterostructures. The analysis of XMCD data establishes that the cation (Fe3+/Ni2+) redistribution occurs on tetrahedral and octahedral sites in the electric field poled NiFe2O4 films, confirming the coupling between magnetism and ferroelectric properties. The films demonstrate repeatable switching of sign of ME output voltage α (α = dP/dH) in response to the applied positive and negative electric pulse, which can be used to store binary information in the nonvolatile manner. The electric-field-controlled switching of α in thin films offers an energy-efficient approach for low-power-consumption nonvolatile memory devices.
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