Abstract
Magnetism arising from edge spins is highly interesting, particularly in 2D atomically thin materials in which the influence of edges becomes more significant. Among such materials, molybdenum disulfide (MoS2; one of the transition metal dichalcogenide (TMD) family) is attracting significant attention. The causes for magnetism observed in the TMD family, including in MoS2, have been discussed by considering various aspects, such as pure zigzag atomic-structure edges, grain boundaries, and vacancies. Here, we report the observation of ferromagnetism (FM) in few-layer MoS2 nanomeshes (NMs; honeycomb-like array of hexagonal nanopores with low-contamination and low-defect pore edges), which have been created by a specific non-lithographic method. We confirm robust FM arising from pore edges in oxygen(O)-terminated MoS2-NMs at room temperature, while it disappears in hydrogen(H)-terminated samples. The observed high-sensitivity of FM to NM structures and critical annealing temperatures suggest a possibility that the Mo-atom dangling bond in pore edge is a dominant factor for the FM.
Highlights
Edge-spin-derived magnetism in 2D atomically thin materials is a key to fabricate flexible magnetic and spintronic devices without using rare-earth magnetic elements
Because the GNMs were fabricated using a specific non-lithographic method, the pore edges controlled by critical-temperature annealing were obtained with the small amount of disorder and contamination, which resulted in a zigzag atomic structure of pore-edges through edge-atomic reconstruction as explained in later
Because a NM structure has a large ensemble of graphene nanoribbons (GNRs) and zigzag pore edges, small magnetic signals arising from the pore edge spins of a GNM could be effectively detected even at room temperature
Summary
Edge-spin-derived magnetism in 2D atomically thin materials is a key to fabricate flexible magnetic and spintronic devices without using rare-earth magnetic elements. The NM structure disappears due to pore-edge atomic reconstruction by annealing at temperatures slightly above Tan (∼20 ◦C), because the interpore regions are NRs with widths as low as 10–20 nm (supplementary material).
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