Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface

Abstract

Here we report a contact geometry for directly accessing the hetero-structured interface formed at the junction of a two-dimensional and three-dimensional material. This type of edge contact proves to be very efficient to improve the performance of photosensitive devices intrinsically having slow response and persistent photoconductivity under biased conditions. The device demonstrates fast photoresponse speeds of <40 ms range under −5 V and +5 V.