Abstract
The superior material properties of diamond power semiconductor devices make them a crucial technology. For high-voltage applications, optimized structures such as electric field edge termination are required for devices. In this paper, we have investigated the optimization of electric field relaxation techniques in oxygen-terminated p-type diamond Schottky barrier diodes and made comparisons with regard to electric field crowding and breakdown in oxides. Due to the low dielectric constant of diamond, Al 2O 3 is appropriate for the fabrication of field plate structures in diamond power devices.
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