Abstract
It was experimentally shown that doping of pure ZnSe melt crystals by a number of rare-earth elements (Ce, Gd and Yb) causes a «purification effect», which is manifested in a significant suppression of low-energy and increase of edge luminescence band.
Highlights
Despite the large band gap ( Eg 2.7 eV at 300 K) and the high probability of radiative recombination, zinc selenide today, continues to be a promising material for creating blue-blue LEDs
We study the effect of a series of rare-earth elements (REE) (Ce, Gd, Yb) on the formation of the edge luminescence band of pure melt crystals and its temperature evolution
The first band is caused by recombination on donor – acceptor pairs (DAP), which include negative double-charge VZn zinc vacancies and positive single-charge selenium vacancies VS e
Summary
Despite the large band gap ( Eg 2.7 eV at 300 K) and the high probability of radiative recombination, zinc selenide today, continues to be a promising material for creating blue-blue LEDs. A large variety of intrinsic and uncontrolled point defects, as well as their associates, leading to self-compensation effects are the main reasons for the controlled production of this compound with the required parameters and characteristics [1] These problems are especially serious for the most common bulk ZnSe crystals grown by the Bridgman-Stockbarger method from a melt under an inert gas pressure [2]. We note that it is precisely because of the diversity of the point defects noted above that the physical properties of both pure crystals and crystals doped during the growth process are, in the overwhelming majority of cases, quite far from the expected ones. The temperature changed and was maintained with an accuracy of ± 0.5 K in the range of 300-500 K
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call