Abstract
The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm−2) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (~10 A cm−2). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies.
Highlights
The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length along with the optimization of the source electrode structure
We have demonstrated the development of a vertical organic fieldeffect transistors (VOFETs) platform in which the device preparation relies entirely on photolithography patterning while the top drain electrode is formed using rolled-up metallic NMs
The use of rolled-up drain electrode has enabled the incorporation of very thin organic semiconductor (OSC) layers (35 nm), corresponding to one of the shortest channels ever reported in VOFET devices
Summary
The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. 1234567890():,; Conventional fabrication routes of vertical organic fieldeffect transistors (VOFETs) involve vertical stacking of a diode cell on top of a capacitor unit Such a geometry allows the fabrication of devices with nanoscale active channels— given by the thickness of the organic semiconductor (OSC) layer —having a large cross-sectional area. The deposition of metal through evaporation techniques can cause severe damage to the morphology of the underlying OSC layer and even form pinholes which can result in a short circuit between the source and drain electrodes[19] Because of such reasons, researchers are usually compelled to use channel lengths that are greater than or equal to. In the case of two-terminal devices, this property has been effectively utilized to promote reliable electrical contacts between the rolledup NMs and a few nanometer-thick films[26,27,28,29,30], without damaging the morphology of the active layer and further eliminating the limitations imposed by metal deposition[19]
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