Abstract
We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without the application of the external cavity as well as a high frequency source and recorder, with measuring the only magnetoresistance (EDESR) and transmission (ODMR) spectra within frameworks of the excitonic normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes respectively between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.
Highlights
Spin-dependent transport through semiconductor nanostructures inserted in nano- and microcavities between superconductor leads is of great interest to identify the magnetic resonance phenomena without using both the external cavity and the external high frequency sources and recorders [1,2]
We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers
The new electrically- and optically-detected ESR (EDESR and ODMR) technique, which allows the studies without using an external cavity and a high frequency source and recorder, has been demonstrated by measuring respectively the only magnetoresistance and transmission spectra
Summary
Spin-dependent transport through semiconductor nanostructures inserted in nano- and microcavities between superconductor leads is of great interest to identify the magnetic resonance phenomena without using both the external cavity and the external high frequency sources and recorders [1,2]. One of the best candidate for the role of such a ‘sandwich’ structure that is able to demonstrate the electrically- and optically-detected ESR [ED electron spin resonance (EDESR) and (ODMR)] appears to be the high mobility p-type silicon quantum well (Si-QW), 2 nm wide, confined by the -barriers heavily doped with boron on the n-type Si (100) surface (Figures 1 and 2). The boron centers inside the δ-barriers are found to be the impurity dipoles, B+ - B-, which are a basis of their high temperature superconducting (HTS) properties, if the sheet density of the 2D holes in the Si-QW becomes to be more than 1011 cm–2 (Figures 3(a) and (b)) [2,3].
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