Abstract
We present the first findings of the new electrically and optically detected magnetic resonance technique [ED electron spin resonance (EDESR) and ODMR], which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring only the magnetoresistance (EDESR) and transmission (ODMR) spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes, respectively, between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.
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