Abstract
Si wafers subjected to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ECR) plasma system have been annealed subsequently in the temperature range 300-750/spl deg/C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements on samples annealed at 450/spl deg/C and above. The concentrations of these deep levels reach a maximum at anneal temperatures around 500/spl deg/C and drop substantially beyond 750/spl deg/C.
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