EBIC investigations of thick SOI layers

Abstract

Thick SOI layers obtained by zone melting with and without seeds, respectively, have been investigated by EBIC with respect to their electrical properties (electrical homogeneity, electrically active defects, minority-carrier diffusion length). A variety of inhomogeneities being partly of complex origin has been observed. Their formation is affected by existence of seeds. Besides usual dark contrasts due to defects acting as recombination site there is evidence that some contrast phenomena are caused by dopant inhomogeneities Le comportement electrique de couches epaisses de silicium deposees sur isolant (SOI) est etudie par SEM/EBIC. Ces couches, de plusieurs microns d'epaisseur, sont recristallisees par deplacement d'une zone fondue faisant intervenir ou non un germe. Des contrastes EBIC particuliers sont interpretes comme des heterogeneites de dopant dont l'origine est reliee aux modes de croissance realises a partir de germe oriente