Abstract
The electron-beam-induced-current (EBIC) technique using scanning transmission electron microscopy (STEM) has been applied to the observation of grain boundaries in polycrystalline Si. It was shown that defects in thin regions can disappear or give bright contrast in EBIC images, but are distinct in STEM images. For the sample with a high carrier concentration, the surface effect was shown to dominate the EBIC current for a thin region. The bright contrast of the defects observed for the sample with a low carrier concentration can be attributed to the combination of the diffraction effect and the built-in electric field induced by the depletion of the entire thickness.
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