Abstract
Use of electron beam induced current (EBIC) method in combination of the multifractal analysis for investigation of GaN epitaxial layers with different degree of order of mosaic structure has revealed basic difference in distribution of extended defects with intense nonradiative recombination and small diffusion length of about 0.1 μm. The diffusion length of the layers with well ordered mosaic structure was determined to be 1.5–2 times longer than that of the layers with less-ordered mosaic structure. The difference between the extended defect distributions well correlates with peculiarities of carrier transfer in these layers.
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