Abstract
ABSTRACTThe space charge region width of the Schottky barrier that forms on the interface between aluminum and organic semiconductor polymer of bulk-heterojunction organic photodiodes has been investigated according to reverse voltage bias over the device and the capacitance-voltage characteristics. Here, we investigated the space charge region widths according to incident light power. Comparison of the mathematical models and experimental data measured under different light power indicate that effect of light on the space charge region of photodiodes is similar to the effect of base-emitter voltage on the space charge region of base-emitter junction in bipolar junction transistors.
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