Abstract
The early stages of Sn-doped In2O3 (ITO) film growth on amorphous SiO2 (a-SiO2) surfaces were observed by atomic force microscopy (AFM) and transmission electron microscopy (TEM). AFM measurements clearly showed that the surface morphologies of the ITO films (3–6 nm in thickness) possessed an extended hill-and-valley structure. TEM analysis revealed that small ITO islands on the a-SiO2 surface could aggregate, resulting in the formation of larger ITO islands approximately 15–30 nm in diameter. The combined results indicate that the ITO film growth on a-SiO2 surfaces is similar to that on glass surfaces.
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