Abstract
The atomistic pathway towards the growth of semiconductor heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at T=600 degrees Celsius on a 8 degrees off Si(001) surface miscut along [110] is performed by scanning tunneling microscopy (STM). The microscopic processes occurring during growth are identified. Highly resolved STM images show how double height steps, which characterize the clean substrate, evolve by a step flow process generated by ad-dimer chains located at specific positions. This process leads to the formation of metastable single domains until the development of {105} faceted ripples extending along the whole surface in the miscut direction.
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