Abstract
This paper presents the results of edge-Transient Current Technique (e-TCT) measurements of a test structure of a High Voltage CMOS (HV-CMOS) pixel demonstrator, the H35DEMO. Several high resistivity (1000 Ω⋅cm) samples of the device were thinned to 100μm, processed for backside biasing, and irradiated with neutrons to fluences up to 2⋅1016neq⋅cm−2. The evolution of effective doping concentration with respect to fluence is studied. Samples irradiated to a fluence of 5⋅1014neq⋅cm−2 are fully depleted beyond −50V substrate bias voltage while samples irradiated to the highest fluence reach 30 μm depletion at −200V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
