Latest results on the HV-CMOS pixel sensor in the ams H18 process

Abstract

High voltage CMOS (HV-CMOS) pixel sensors are active pixel sensors which have been developed for charged particle detection in high-energy physics experiments. The relatively new HV-CMOS processes on the market enable the implementation of in-pixel logic on the sensor, allowing for semihybrid detector concepts with novel read-out techniques. Early prototype sensors have shown very high radiation hardness, a key property for high-energy physics use. The latest prototype fabricated in the ams H18 process has been measured in a particle test beam for efficiency. Results are presented for a non-irradiated and a neutron-irradiated sensor up to 1 × 1015 (1 MeV neq/cm2). Outlook is given on how to improve the already promising results as well as on further measurements and future development.