Abstract
Abstract The effects of P or B doping and annealing on the localized gap states in CVD a-Si have been investigated using E.S.R. An E.S.R. signal with g = 2·0055 disappears with P or B doping and a signal with linewidth depending on temperature at g = 2·0043 and one with linewidth (∼20 G) independent of temperature at g ∼ 2·011 appear in heavily P- and B-doped samples, respectively. These two signals are similar to photo-induced E.S.R. signals observed in undoped GD a-Si, and it is proposed that they arise from negative and positive charge states of weak bonds in a-Si, respectively. The dependences of the spin densities of these signals on doping and measurement temperature have been explained by this proposed model.
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