Abstract
The effects of plasma-hydrogenation on the electron spin resonance (ESR), electrical properties and optical band gap are investigated for phosphorus and boron doped CVD amorphous silicon films. For phosphorus doped films, the doping efficiency and photoconductivity are largely improved with hydrogenation. However, for boron doped films, a negative hydrogenation effect on doping efficiency is observed. The role that hydrogen plays in these properties, and the nature of ESR centers with g=2.013 and 2.0043 due to the valence- and conduction-band tail states, respectively, are discussed through the hydrogenation effects.
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