Abstract
Dysprosium deposited on Si(110) at 720 °C is observed to form self-assembled silicide nanowire (NW) structures with a single orientation and average dimensions of 15 nm wide and microns long. The NW sides grow into the substrate along inclined Si{111} planes, forming a V-shaped cross section with an interface that is coherent on one side, described by DySi2(0001)//Si(111_) and DySi2[011_0]//Si[1_10], and incoherent on the other. This type of growth represents a physical mechanism for self-assembled NW formation that does not require anisotropic lattice mismatch.
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