Abstract
MnSi~1.7 nanowires (NWs) with a single orientation and a large aspect ratio have been formed on a Si(110) surface with the molecular beam epitaxy method by a delicate control of growth parameters, such as temperature, deposition rate, and deposition time. Scanning tunneling microscopy (STM) was employed to study the influence of these parameters on the growth of NWs. The supply of free Si atoms per unit time during the silicide reaction plays a critical role in the growth kinetics of the NWs. High growth temperature and low deposition rate are favorable for the formation of NWs with a large aspect ratio. The orientation relationship between the NWs and the reconstruction rows of the Si(110) surface suggests that the NWs grow along the direction of the silicon substrate. High-resolution STM and backscattered electron scanning electron microscopy images indicate that the NWs are composed of MnSi~1.7.
Highlights
Self-assembled nanowires (NWs) of metal silicides have received much attention recently for their potential applications as electrical interconnects on a scale that cannot be attained with conventional lithographic methods [1,2,3,4]
We examine in detail, mainly using scanning tunneling microscopy (STM), the influence of growth temperature, deposition rate, and deposition time on the formation of MnSi~1.7 NWs on the Si(110) surface
After surveying the flashed Si(110) surface by STM, we evaporate Mn atoms onto the surface at different substrate temperatures in the range of room temperature (RT) to 600°C, while the deposition rate and time are kept at approximately 0.02 ML/min and 50 min, respectively
Summary
Self-assembled nanowires (NWs) of metal silicides have received much attention recently for their potential applications as electrical interconnects on a scale that cannot be attained with conventional lithographic methods [1,2,3,4]. Such structures are expected to display novel physical properties related to the structural anisotropy and quantum confinement effects and could be used as active elements for the new generation of electronic, optoelectronic, magnetic, and thermoelectric devices [5,6,7]. We examine in detail, mainly using scanning tunneling microscopy (STM), the influence of growth temperature, deposition rate, and deposition time on the formation of MnSi~1.7 NWs on the Si(110) surface
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