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Abstract
Femtosecond time-resolved photoluminescence experiments have been used to study the nonlinear dynamics of novel monolithic GaInNAs/GaAs semiconductor saturable absorber mirrors at 1.08 and 1.55 μm. The mirror structures were grown using molecular-beam epitaxy followed by Ni-ion implantation and thermal annealing. We present photoluminescence measurements showing the critical role of post-growth processing on the response time of GaInNAs/GaAs absorber mirrors.
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