Abstract
Previous studies have established that pentacene films deposited on silicon oxide consist of a substrate-induced "thin-film" phase, with the bulk phase of pentacene detected in thicker films only. We show that the bulk phase nucleates as early as the first monolayer, and continues to nucleate as film growth progresses, shadowing the growth of the thin-film phase. Moreover, we find that the transition between the "thin-film" and the bulk phase is not a continuous one, as observed in heteroepitaxial systems, but rather the two phases nucleate and grow independently.
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