Dynamical electron localization and self-induced transparency in semiconductor superlattices

Abstract

The mechanisms of the occurrence of self-induced and selective transparencies of semiconductor superlattices in a strong time-dependent electric field are investigated. The association of these mechanisms with Bloch oscillations, dynamical localization, and collapse of electron quasi-energy minibands is analyzed, and a comparison with the properties of Josephson junctions is made. It is shown that the self-induced transparency is due to the fact that the current-contributing component of the electron distribution function is destroyed by collisions at discrete values of the amplitude of the time-harmonic field, while the selective transparency is associated with the nonmonotonic dependence of the spectrum of nonlinear electron oscillations in the electric field on the amplitude of the field. The dynamical localization and collapse of quasi-energy minibands lead to the field energy dissipation and are favorable to destruction of the transparency states of the superlattice.