Abstract
We present the results of a study of ${\mathrm{H}}^{\mathrm{\ensuremath{-}}}$ formation in collisions of 1--4 keV hydrogen ions with a Si surface. Measurements of scattered negative ion fractions are reported. These are found to be of the same magnitude as for clean metal surfaces like Al. A dynamic velocity-dependent effect in electron capture is observed. A velocity-dependent, nonresonant, charge-transfer process involving localized dangling-bond surface states is invoked to explain this observation.
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