Abstract
ABSTRACT: A practical computing procedure has been developed for calculating reflection high energy electron diffraction (RHEED) from molecular beam epitaxy (MBE) growing surfaces. A birth-death growth model has been generalized to describe the epitaxy growth as well as interface formation, and the diffraction from MBE growing surfaces is treated dynamically using a systematic reflection approximation. Our method is shown to be able to reproduce almost all features of measured RHEED intensity oscillations from low-index surfaces.
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