Abstract
Dislocation-point defect iiiterac~ions have been investigated in high purity LiF single crystals containing less than 5 ppni of Mg?-, utilising dynamic strain ageing techniques. Two mechanisms of strain ageing have been found. Below 200 the mechanism is one of weak pinning of dislocations by tetragonal strain fields around impurity-vacancy dipoles giving rise to a slight flow stress increase after ageing under stress. Above 200 C. the strain ageing is due to the strong pinning of dislocations by ordered atmospheres containing impurity-vacancy dipoles and othcr point defects. This results in the presence of serrated yielding, and a large flow stress increase after ageing under stress. Thcse erects may also be important in previo~~sly reported work hardening data in LiF single crystals.
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