Dynamic Stark effects in a semiconductor quantum dot exhibiting a two-hole species valence band

Abstract

We have analytically explored the nature of Stark shift and self energy correction in the presence of two discrete excitonic states i.e, the heavy-hole and light-hole valence bands, below the fundamental absorption edge of semiconductor quantum dots. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The detuning spectra of Stark shift and self energy correction and their dependence on a moderately strong electric field, have been analyzed. The numerical and analytical estimations in a weak noncentrosymmetric CdTe quantum dot show a decrease in Stark shift and an enhancement in self energy correction for both heavy-hole and light-hole excitons.