Abstract
Abstract We have measured the time dependence of deuterium re-emission from graphite during and after implantation with 18 keV D+3 in the temperature range 116 ⩽ T ⩽ 223 K. In all cases the implantation was continued until stationary conditions were established. After stopping the beam, 5–10% of the total inventory was released with a time constant decreasing with increasing temperature. In this temperature range the release is tentatively described by an activated diffusion process with an activation energy of 0.03 ± 0.01 eV. It is suggested that the dynamic fraction consists of molecular deuterium which is formed by local recombination during implantation.
Published Version
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