Abstract
Magnetic-field-induced oscillatory instabilities in semiconductors are explained by a novel dynamic Hall effect of hot electrons. The basic new idea is to consider the nonlinear dynamics of both the drift and the Hall field due to dielectric relaxation coupled with impact ionization of hot carriers. This results in self-generated current or voltage oscillations under DC bias, period-doubling, and intermittency routes to chaos. Numerical simulations are presented for p-Ge, n-InSb, and n-GaAs with field-dependent mobilities and one or two shallow impurity levels at 4.2 K. In particular, the universal scaling behaviour of type-I intermittency as a function of magnetic field is demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
