Abstract
The dynamic Hall effect is presented as a novel model for transverse magnetic field induced oscillatory instabilities in semiconductors. Comprehensive account is given of the theoretical derivation of nonlinear dynamic magnetotransport properties of hot electrons, a linear stability analysis, and nonlinear simulations for a variety of materials with positive or negative differential conductivity in the regime of low-temperature impurity breakdown. Periodic, chaotic, and intermittent voltage oscillations and period-doubling scenarios as a function of current or magnetic field are found under dc bias. The physical mechanism rests upon the dielectric relaxation of both drift and Hall field, coupled with impurity impact ionization.
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