Abstract
A theory of base transport in an abrupt-junction heterostructure bipolar transistor (HBT) is developed in the diffusion limit. The theory is valid for a continuous range of emitter injection energies Delta and accounts for the Early effect in both the static and the high-frequency limits. Small-signal network parameters strongly depend on Delta and differ from those in a graded emitter-base junction HBT.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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