Dynamic defect as nonradiative recombination center in semiconductors

Abstract

We present a theory of nonradiative recombination (NRR) with an emphasis on the so far little-explored dynamic effect in the process. We show that it can significantly enhance the NRR rate over that of a static midgap level as suggested by the Shockley-Read-Hall theory, whereby offering an alternative explanation to the long-lasting discrepancy between theory and experiment for semiconductors. As an illustration, we show that dynamic NRR can take place at the $DX$ center in Si-doped GaAs which, combined with a modified ABC model at high carrier-density limit, makes it possible to verify the theory directly by experiment.