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Abstract
The dependence of current-voltage (I-V) characteristics on Fe-doped semi-insulating (SI) InP layer thickness has been investigated experimentally. The I-V characteristics exhibit nonlinear behavior with ohmic, transition, and space-charge-limited regimes. An approximate circuit model of the buried crescent laser which describes the dynamic characteristics of the SI current blocking layers is presented. It is shown that for a 5-μm-thick SI layer, a very high resistivity of 4.9×108 Ω cm and a very low capacitance of 1 pF are obtained at the typical operating voltage for laser diodes of 1–2 V. Thus, semiconductor lasers with Fe-doped SI InP current blocking layers offer great promise for achieving both wide modulation bandwidth and high-power operation.
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