Abstract
A high-frequency diode is an essential component in electrical circuits providing the current rectification function for AC/DC converters, radio frequency detectors, and automotive inverters. Schottky barrier diodes based on wide-bandgap semiconductors are promising for the high-frequency applications owing to short reverse recovery time that minimizes the energy dissipation during the switching. In this study, we report dynamic characteristics of Schottky junctions composed of a layered oxide metal PdCoO2 and an n-type β-Ga2O3 substrate. Rectifying current–voltage characteristics with reasonably small hysteresis were demonstrated up to a high frequency of 3 MHz in the PdCoO2/β-Ga2O3 Schottky junctions. For the on-state to off-state switching with the current ramp rate of approximately −2 × 1010 A/scm2, the reverse recovery time was as short as 11 ns. The short reverse recovery time was constantly obtained in the operation temperature range of 25–350 °C, showing low-loss switching properties of the PdCoO2/β-Ga2O3 Schottky junctions. The Schottky barrier height of ∼1.78 eV and the ideality factor of ∼1.06 were maintained after the 108-times on–off switching cycles. The fast switching with less energy dissipation and high durability of the PdCoO2/β-Ga2O3 Schottky junctions would be suitable for application in high-frequency power devices operating at high temperature.
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