Abstract
A 4H-SiC pin diode with improved termination named mesa JTE has been developed and a high blocking voltage of 6.2kV and a low VF of 4.7V at 100A/cm2 have been achieved. A developed diode has a short reverse recovery time of 28.5ns at room temperature. By evaluation of reverse recovery characteristics, a developed diode has a minority carrier lifetime of longer than 1μs at 350°C in spite of a minority carrier lifetime of 64ns at room temperature. Furthermore, a developed diode has 1/29th lower recovery loss than those of a commercialized 4.5kV Si diode.
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