Abstract
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. Here, we study the dynamics of radiation defects in Ge in the temperature range of 100–160 °C under pulsed beam irradiation with 500 keV Ar ions when the total ion fluence is split into a train of equal square pulses. By varying the passive portion of the beam duty cycle, we measure a characteristic time constant of dynamic annealing, which rapidly decreases from ~8 to 0.3 ms with increasing temperature. By varying the active portion of the beam duty cycle, we measure an effective diffusion length of ~38 nm at 110 °C. Results reveal a major change in the dominant dynamic annealing process at a critical transition temperature of ~130 °C. The two dominant dynamic annealing processes have an order of magnitude different activation energies of 0.13 and 1.3 eV.
Highlights
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects
It has been well established that the buildup of radiation damage in Ge, above room temperature, is complicated by pronounced dynamic annealing (DA) processes[2,3,4,5,6,7,8,9,10,11,12,13]
Fonton), where g is the of stable damage formation scales linearly with the density of mobile defects, n ∝ ρdisplacements ∝ 1 + 4Ld2Fonton
Summary
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. We are unaware of any previous measurements of the effective diffusion length of mobile defects (Ld) in ion-bombarded Ge. Here, we use a recently developed pulsed ion beam method[15,16,17,18,19,20,21] to study the dynamics of radiation defect interaction in Ge bombarded with 500 keV Ar ions.
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