Abstract
The dV/dt values for 4H-SiC Schottky type diodes with different type packages have been determined experimentally. It is determined that experimental dV/dt values for 4H-SiC Schottky type diodes in metal-polymeric packages (SOT-89, QFN, PQFN, TO-220) are varying in interval of 645¸1103 V/ns. It is established that the dV/dt dependence on maximal amplitude of reverse voltage demonstrate nonlinear character (close to parabolic dependence) for all studied SiC Schottky type diodes in different type packages.
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