Abstract
Selective-area epitaxy has been shown to be an effective way to produce a monolithic multiple-wavelength laser source suitable for wavelength division multiplexing (WDM). In general the channel outputs of multiple-wavelength laser arrays have a spatial separation that is large in comparison to the core diameter of a single mode fiber. Therefore, external coupling is required to combine the outputs into a single fiber. In this work, we report the fabrication of a dual-channel strained-layer, InGaAs-GaAs-AlGaAs quantum well WDM laser with integrated waveguide output coupler by an atmospheric pressure metal-organic chemical vapor deposition (MOCVD) three-step selective-area growth process.
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