Abstract
In this work, we present simple design of a dual-band perfect light absorber (PLA) in visible region based purely on silicon. The PLA is consisted of a cylinder silicon resonator array adhered on a continuous gold film. Numerical simulation indicates that the absorbance of the PLA is up to 98.6% and 99.9% at 469 THz and 497.5 THz, respectively. Further simulations indicate that the proposed PLA is polarization-insensitive and wide-angle for both TE and TM wave. The distributions of electric field, magnetic field and surface current reveal that the optical Mie resonance modes of the silicon nanostructure couple strongly to the incident light, leading to a dual-band perfect absorption. In addition, dual-band perfect absorption characteristics of the proposed PLA can be adjusted dynamically by changing the geometric parameters of the silicon nanostructure. The dual-band, perfect absorption, polarization-independence and wide-angle properties make this PLA promising for future applications in detector, sensors and bolometers.
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