Abstract
This paper investigates the work function adjustment on fully silicided (FUSI) NiSi metal gates for dual-gate CMOS, and how it is effected by the poly-Si dopants. By comparing FUSI on As-, B-, and undoped poly-Si using the same p-Si substrates, it is shown that both As and B influence the work function of NiSi FUSI gate significantly, with As showing more effects than B possibly due to more As pile-up at the NiSi-SiO/sub 2/ interface. No degradations on the underlying gate dielectrics are observed in terms of interface state density (D/sub it/), fixed oxide charges, leakage current, and breakdown voltage, suggesting that NiSi FUSI is compatible with dual-gate CMOS processing.
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