Abstract
Abstract Dual species ion implants of Se in conjunction with Ga implant in Cr-doped semi-insulating GaAs have been carried out. Electron concentration and mobility profiles have been investigated for annealed samples using differential Hall-effect and sheet-resistivity measurements. It has been shown that the dnal implantations give high maximum electron concentrations above 1 × 1019 cm−3 when those samples are annealed at 950°C using a low oxygen content CVD Si3 N4 encapsulant. Experimental results indicate that the major part of the enhanced maximum electron concentrations arise from Se donors on As vacancy sites.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
