Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing

Abstract

With the compatibility and scalability of Hf0.5Zr0.5O2 (HZO) film, the HZO-based Ferroelectric field-effect transistors (FeFETs) have attracted extensive attention as artificial synapses to break the Von Neumann bottleneck. For neuromorphic computing, improved synaptic features and suppressed sneak paths are of great importance in a large-scale FeFET array. In this work, a dual-pulse programming scheme is proposed with an identical VG pulse and an incremental VD pulse. The gradual domain switching is achieved corresponding to the potentiation and depression process. Moreover, both write-disturb and read-disturb are investigated under 50 successive pulses. With the proposed dual-pulse programming scheme, 93.8% accuracy of image recognition is achieved in artificial tasks by using the MNIST dataset. Our findings may provide potential for developing HZO-FeFET-based neuromorphic computing.