Abstract
Recently, hafnium oxide (HfO2)-based ferroelectric materials have achieved phenomenal success in next-generation nonvolatile memory applications. In this study, we fabricated Hf0.5Zr0.5O2 (HZO) ferroelectric capacitors and back-gate field-effect transistors (FETs) with few-layered molybdenum disulfide (MoS2) nanosheets as the channel and a ferroelectric Hf0.5Zr0.5O2 film as the gate dielectric. Good dielectric and ferroelectric properties have been observed from the HZO film fabricated with atomic layer deposition-based techniques. The MoS2–HZO ferroelectric FETs (FeFETs) have exhibited excellent performance including ferroelectric polarization switching with a high on/off ratio and negligible degradation in endurance and retention properties. Our results shown here suggest that MoS2–HZO FeFETs can be a promising alternative for next-generation nonvolatile memories.
Highlights
In the past decades, there has been a growing need for highspeed and low-power non-volatile memory technology to boost the performance of advanced wearable and portable electronic devices
The results have shown that the MoS2–HZO ferroelectric FETs (FeFETs) can exhibit excellent nonvolatile memory performance based on ferroelectric polarization switching with a high on/off ratio and negligible degradation in retention properties
To study the composition of the HZO film grown by the ALDbased method, x-ray photoelectron spectroscopy (XPS) analysis is performed to characterize its material components and chemical bonding
Summary
There has been a growing need for highspeed and low-power non-volatile memory technology to boost the performance of advanced wearable and portable electronic devices. Integrating 2D TMDs as the active channel in ferroelectric memory devices is very promising because it will leverage the advantages of TMD materials with the vast infrastructure of the current fabrication technology.17–20 the doping types and the concentration of HfO2 to enhance ferroelectricity have been extensively studied,21–24 the fabrication of ferroelectric field-effect transistor (FeFET) devices for non-volatile memory applications has rarely been reported.23 In this work, we have shown back-gate FETs with few-layered MoS2 nanosheets as the channel integrated with the ferroelectric HZO film as the gate dielectric.
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