Abstract
Dual metal gate CMOS FinFETs have been integrated successfully by the Ta/Mo interdiffusion technology. For the first time, low- V t CMOS FinFETs representing on-current enhancement and high- V t CMOS FinFETs reducing stand-by power dramatically, namely multi- V t CMOS FinFETs, are demonstrated by selecting Ta/Mo gates for n or pMOS FinFETs with non-doped fin channels. The dual metal gate FinFET SRAM with a low- V t configuration is demonstrated with excellent noise margins at a reduced supply voltage.
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