Dual material tri-gate Schottky barrier FET as label free biosensor

Abstract

In this work, the Dual Material Tri Gate Schottky Barrier Field Effect Transistor (DM-TG-SB-FET) is designed and explored for the biosensing applications. The device uses two different materials of gates and the cavities are created near drain-channel and source-channel junction under gates. The biomolecules with dielectric constant K = 5 to K = 12 have been filled in the cavities and the change has been sensed in the device parameters that are electrical in nature. The sensing parameters have been calculated and compared with the already existing Dielectric Modulated FET based biosensor and a significant improvement has been seen in the DM-TG-SB-FET biosensor. The ION sensitivity, gm sensitivity, SS sensitivity, fT sensitivity has been calculated as 28.41, 13.44, 209 (mV/decade), 30.58 × 1011 Hz, respectively, for the biomolecule having dielectric constant, K = 12 in the proposed DM-TG-SB-FET. Also, the change in potential and energy band diagrams has been seen for different dielectric constants that has led to the change in the electrical parameters of the device.