Abstract
In this paper, we present a simulation study, using ATLAS-2D, of analog circuit performance metrics for the dual-material gate (DMG) MOSFETs in Part I. Part II focuses on the impact of double-layer gate stack architecture on the analog performance and fT-gain relationship of the silicon-on-nothing MOSFETs with and without DMG. The simulation results in Part I demonstrate that, out of the several combinations in DMG MOSFET design studied, the DMG device with an LM1/L ratio of frac12 amalgamates the advantages of using a high metal workfunction gate M1 and a low metal workfunction gate M2 in the most efficient manner. An increase in early voltage and a reduced output conductance from the DMG MOSFET design are the driving forces for the observed performance improvement.
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