Abstract
Multijunction solar cells (SCs) have excellent potential to achieve higher efficiency for increased sun concentration. The two‐step photon absorption in the quantum wells (QWs) can further enhance the performance of the solar cell. A GaInP/GaAs dual junction solar cell is proposed with InP QWs. The type‐A InP QWs are inserted in the intrinsic region of the top cell because in the top cell, short‐circuit current governs the overall cell current. The voltage preservation is applied by careful structuring of the p–i–n region at the top cell. The sub‐band photon absorption enhances the external and internal quantum efficiency (QE) of the top cell, and both cells have above 90% QEs. The peak efficiencies of 44.09% under 1 sun and 48.18% under 1000 sun concentrations are achieved, and the performance is compared with the available experimental and simulated data.
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